类别是'category.MOSFETs 晶体管阵列' (10000)
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对比 | 图片 | 产品型号 | 品牌 | 数据表 | 库存 | 价格(含增值税) | 数量 | Rohs | 工厂交货时间 | 生命周期状态 | 底架 | 安装类型 | 包装/外壳 | 表面安装 | 引脚数 | 质量 | 晶体管元件材料 | 厂商 | 操作温度 | 包装 | 已出版 | 系列 | JESD-609代码 | 无铅代码 | 零件状态 | 湿度敏感性等级(MSL) | 终止次数 | 终端 | ECCN 代码 | 电阻 | 端子表面处理 | 最高工作温度 | 最小工作温度 | 附加功能 | 电压 - 额定直流 | 最大功率耗散 | 端子位置 | 终端形式 | 峰值回流焊温度(摄氏度) | Reach合规守则 | 额定电流 | 时间@峰值回流温度-最大值(s) | 基本部件号 | 引脚数量 | 参考标准 | JESD-30代码 | 资历状况 | 配置 | 通道数量 | 元素配置 | 操作模式 | 功率耗散 | 箱体转运 | 接通延迟时间 | 功率 - 最大 | 场效应管类型 | 晶体管应用 | Rds On(Max)@Id,Vgs | 不同 Id 时 Vgs(th)(最大值) | 无卤素 | 输入电容(Ciss)(Max)@Vds | 门极电荷(Qg)(最大)@Vgs | 上升时间 | 漏源电压 (Vdss) | 极性/通道类型 | 下降时间(典型值) | 连续放电电流(ID) | 阈值电压 | JEDEC-95代码 | 栅极至源极电压(Vgs) | 最大双电源电压 | 最大漏极电流 (Abs) (ID) | 漏极-源极导通最大电阻 | 漏源击穿电压 | 脉冲漏极电流-最大值(IDM) | 双电源电压 | DS 击穿电压-最小值 | 雪崩能量等级(Eas) | 场效应管技术 | 最大耗散功率(Abs) | 场效应管特性 | 栅源电压 | 反馈上限-最大值 (Crss) | 高度 | 长度 | 宽度 | 器件厚度 | 辐射硬化 | 达到SVHC | RoHS状态 | 无铅 | |||||
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US6M2TR | ROHM Semiconductor | 数据表 | 31720 In Stock | - | 最小起订量: 1 最小包装量: 1 | 16 Weeks | 表面贴装 | 表面贴装 | 6-SMD, Flat Leads | 6 | SILICON | 1.5A 1A | 2 | 25 ns | 150°C TJ | Cut Tape (CT) | 2001 | e2 | yes | 活跃 | 1 (Unlimited) | 6 | SMD/SMT | EAR99 | 340MOhm | 锡铜 | 1W | 260 | 1.5A | 10 | *M2 | 6 | Dual | 增强型MOSFET | 1W | N and P-Channel | SWITCHING | 240m Ω @ 1.5A, 4.5V | 1.5V @ 1mA | 80pF @ 10V | 2.2nC @ 4.5V | 30V 20V | N-CHANNEL AND P-CHANNEL | 1A | 1.5V | 12V | -20V | 30V | METAL-OXIDE SEMICONDUCTOR | Standard | 1.5 V | 无 | 无SVHC | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||
FDMS7606 | ON Semiconductor | 数据表 | 3078 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-PowerWDFN | 8 | 211mg | 11.5A 12A | 2 | Tape & Reel (TR) | PowerTrench® | e4 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 150°C | -55°C | 1W | 260 | 30 | R-PDSO-N6 | Dual | 增强型MOSFET | 2.5W | 排水源头 | 2 N-Channel (Dual) | SWITCHING | 11.4m Ω @ 11.5A, 10V | 3V @ 250μA | 1400pF @ 15V | 22nC @ 10V | 3ns | 3 ns | 12A | 20V | 11.5A | 0.0114Ohm | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 50 pF | 无 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||
SI9936DY | ON Semiconductor | 数据表 | 19000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 2 | 25 ns | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | 50MOhm | 900mW | Dual | 2W | 2 N-Channel (Dual) | 50m Ω @ 5A, 10V | 1V @ 250μA | 525pF @ 15V | 35nC @ 10V | 10ns | 30V | 10 ns | 5A | 20V | 30V | Standard | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN1029UFDB-7 | Diodes Incorporated | 数据表 | N/A |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | 无铅 | 未说明 | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.4W | 2 N-Channel (Dual) | SWITCHING | 29m Ω @ 5A, 4.5V | 1V @ 250μA | 914pF @ 6V | 19.6nC @ 8V | 12V | 5.6A | 0.029Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | NX138AKSX | Nexperia USA Inc. | 数据表 | 50 In Stock | - | 最小起订量: 1 最小包装量: 1 | 4 Weeks | 表面贴装 | 6-TSSOP, SC-88, SOT-363 | YES | SILICON | 2 | 170mA Ta | -55°C~150°C TJ | Tape & Reel (TR) | 2016 | 活跃 | 1 (Unlimited) | 6 | 鸥翼 | 6 | IEC-60134 | R-PDSO-G6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 325mW | 2 N-Channel (Dual) | SWITCHING | 4.5 Ω @ 170mA, 10V | 1.5V @ 250μA | 20pF @ 30V | 1.4nC @ 10V | 60V | 0.17A | 60V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | STC5NF20V | STMicroelectronics | 数据表 | 32 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-TSSOP (0.173, 4.40mm Width) | 8 | SILICON | 2 | 27 ns | -55°C~150°C TJ | Cut Tape (CT) | STripFET™ II | e4 | Obsolete | 1 (Unlimited) | 8 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 低阈值 | 20V | 1.5W | 鸥翼 | 260 | 5A | 10 | STC5NF | 8 | 不合格 | 增强型MOSFET | 1.5W | 2 N-Channel (Dual) | SWITCHING | 40m Ω @ 2.5A, 4.5V | 600mV @ 250μA | 460pF @ 15V | 11.5nC @ 4.5V | 33ns | 33 ns | 5A | 12V | 5A | 0.045Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||
![]() | PMDPB55XP,115 | Nexperia USA Inc. | 数据表 | 21000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 8 Weeks | 表面贴装 | 6-UDFN Exposed Pad | 6 | 135 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2012 | e3 | 活跃 | 1 (Unlimited) | Tin (Sn) | 490mW | 6 | 2 | Dual | 4 ns | 2 P-Channel (Dual) | 70m Ω @ 3.4A, 4.5V | 900mV @ 250μA | 785pF @ 10V | 25nC @ 5V | 14ns | 20V | 68 ns | 3.4A | -650mV | -20V | -20V | 逻辑电平门 | 无 | ROHS3 Compliant | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMP2060UFDB-7 | Diodes Incorporated | 数据表 | 2505 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e4 | Obsolete | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | 1.4W | 无铅 | 未说明 | 未说明 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.4W | 2 P-Channel (Dual) | SWITCHING | 90m Ω @ 2.9A, 4.5V | 1.4V @ 250μA | 881pF @ 10V | 18nC @ 8V | 20V | 3.2A | 0.09Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS3601 | ON Semiconductor | 数据表 | 99 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 1.3A | -55°C~175°C TJ | Tape & Reel (TR) | 2001 | PowerTrench® | Obsolete | 1 (Unlimited) | compliant | 900mW | 2 N-Channel (Dual) | 480m Ω @ 1.3A, 10V | 4V @ 250μA | 153pF @ 50V | 5nC @ 10V | 100V | 逻辑电平门 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
AO4618 | Alpha & Omega Semiconductor Inc. | 数据表 | 89999 In Stock | - | 最小起订量: 1 最小包装量: 1 | 13 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 8A 7A | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Obsolete | 1 (Unlimited) | 2W | 增强型MOSFET | 2W | N and P-Channel | 19m Ω @ 8A, 10V | 2.4V @ 250μA | 415pF @ 20V | 12nC @ 10V | 40V | N-CHANNEL AND P-CHANNEL | 7A | 20V | 7A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | CSD87313DMS | Texas Instruments | 数据表 | 55400 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | ACTIVE (Last Updated: 2 days ago) | 表面贴装 | 8-PowerWDFN | YES | 8 | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | NexFET™ | yes | 活跃 | 1 (Unlimited) | 6 | EAR99 | 雪崩 额定 | 无铅 | CSD87313 | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | SOURCE | 2 N-Channel (Dual) Common Drain | SWITCHING | 1.25V @ 250μA | 4290pF @ 15V | 28nC @ 4.5V | 30V | 67 mJ | METAL-OXIDE SEMICONDUCTOR | Standard | 200 pF | 3.3mm | 3.3mm | 750μm | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF9389PBF | Infineon Technologies | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | 11 Weeks | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | SILICON | 6.8A 4.6A | 2 | -55°C~150°C TJ | Tube | 2004 | HEXFET® | Discontinued | 1 (Unlimited) | 8 | EAR99 | 2W | DUAL | 鸥翼 | 未说明 | 未说明 | IRF9389 | R-PDSO-G8 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | N and P-Channel | SWITCHING | 27m Ω @ 6.8A, 10V | 2.3V @ 10μA | 398pF @ 15V | 14nC @ 10V | 30V | N-CHANNEL AND P-CHANNEL | 4.6A | MS-012AA | 6.8A | 0.027Ohm | 34A | 30V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||
![]() | IRF6723M2DTRPBF | Infineon Technologies | 数据表 | 24000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | DirectFET™ Isometric MA | 3 | SILICON | 2 | 15 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2009 | HEXFET® | e1 | Obsolete | 1 (Unlimited) | 4 | EAR99 | 锡银铜 | 2.7W | BOTTOM | 260 | 30 | IRF6723M2DPBF | R-XBCC-N4 | Dual | 增强型MOSFET | 2.7W | DRAIN | 14 ns | 2 N-Channel (Dual) | SWITCHING | 6.6m Ω @ 15A, 10V | 2.35V @ 25μA | 1380pF @ 15V | 14nC @ 4.5V | 41ns | 30V | 20 ns | 15A | 20V | 47A | 0.0066Ohm | 30V | 71 mJ | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 596μm | 6.35mm | 5.05mm | 无 | 符合RoHS标准 | ||||||||||||||||||||||||||||||||||||||||
NVMFD5853NT1G | ON Semiconductor | 数据表 | 33353 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 13 Weeks | ACTIVE, NOT REC (Last Updated: 1 week ago) | 表面贴装 | 表面贴装 | 8-PowerTDFN | 8 | 21 ns | -55°C~175°C TJ | Tape & Reel (TR) | 2013 | e3 | yes | 不用于新设计 | 1 (Unlimited) | Tin (Sn) | 3.1W | not_compliant | 8 | 增强型MOSFET | 9 ns | 2 N-Channel (Dual) | 10m Ω @ 15A, 10V | 4V @ 250μA | 1225pF @ 25V | 24nC @ 10V | 20ns | 40V | 3 ns | 12A | 20V | 53A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | ROHS3 Compliant | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDMA1023PZ-F106 | ON Semiconductor | 数据表 | 18000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 16 Weeks | ACTIVE (Last Updated: 1 week ago) | 表面贴装 | 6-VDFN Exposed Pad | YES | SILICON | 3.7A Ta | 2 | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | yes | 活跃 | 6 | 无铅 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 700mW Ta | 2 P-Channel (Dual) | SWITCHING | 72m Ω @ 3.7A, 4.5V | 1V @ 250μA | 655pF @ 10V | 12nC @ 4.5V | 20V | MO-229VCCC | 3.7A | 0.072Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 1.5W | Standard | 135 pF | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTLJD3115PTAG | ON Semiconductor | 数据表 | 231000 In Stock | - | 最小起订量: 1 最小包装量: 1 | LAST SHIPMENTS (Last Updated: 4 days ago) | 表面贴装 | 6-WDFN Exposed Pad | YES | 6 | SILICON | 2.3A | 2 | 19.8 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 6 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 710mW | C 弯管 | 260 | 40 | NTLJD3115P | 6 | 不合格 | Dual | 增强型MOSFET | 1.5W | DRAIN | 2 P-Channel (Dual) | SWITCHING | 100m Ω @ 2A, 4.5V | 1V @ 250μA | 531pF @ 10V | 6.2nC @ 4.5V | 15ns | 20V | 15 ns | -4.1A | 8V | 2.3A | 0.135Ohm | -20V | 20A | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||
![]() | DMC1030UFDBQ-7 | Diodes Incorporated | 数据表 | 39000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 15 Weeks | 表面贴装 | 表面贴装 | 6-UDFN Exposed Pad | SILICON | 2 | -55°C~150°C TJ | Tape & Reel (TR) | 2011 | Automotive, AEC-Q101 | e4 | 活跃 | 1 (Unlimited) | 6 | EAR99 | Nickel/Palladium/Gold (Ni/Pd/Au) | HIGH RELIABILITY | 1.36W | DUAL | 无铅 | S-PDSO-N6 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | DRAIN | 1.36W | N and P-Channel Complementary | SWITCHING | 34m Ω @ 4.6A, 4.5V | 1V @ 250μA | 1003pF @ 6V | 23.1nC @ 10V | 12V | N-CHANNEL AND P-CHANNEL | 5.1A | 0.034Ohm | 12V | METAL-OXIDE SEMICONDUCTOR | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||
NDS9933A | ON Semiconductor | 数据表 | 19000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 31 ns | -55°C~150°C TJ | Tape & Reel (TR) | Obsolete | 1 (Unlimited) | -20V | 900mW | -2.8A | 2W | 2 P-Channel (Dual) | 140m Ω @ 2.8A, 4.5V | 1V @ 250μA | 405pF @ 10V | 8.5nC @ 4.5V | 20ns | 20V | 21 ns | 2.8A | 8V | -20V | 逻辑电平门 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | ECH8653-TL-H | ON Semiconductor | 数据表 | 9000 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 8-SMD, Flat Lead | 8 | 94 ns | 150°C TJ | Tape & Reel (TR) | 2007 | e6 | yes | Obsolete | 1 (Unlimited) | EAR99 | Tin/Bismuth (Sn/Bi) | 1.5W | 8 | Dual | 1.5W | 13 ns | 2 N-Channel (Dual) | 20m Ω @ 4A, 8V | 无卤素 | 1280pF @ 10V | 18.5nC @ 8V | 48ns | 20V | 36 ns | 7.5A | 10V | 20V | 逻辑电平门 | 无 | 符合RoHS标准 | 无铅 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | DMN63D1LDW-7 | Diodes Incorporated | 数据表 | 3000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 6 Weeks | 表面贴装 | 表面贴装 | TO-236-3, SC-59, SOT-23-3 | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | yes | Obsolete | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 310mW | 未说明 | 未说明 | 310mW | 2 N-Channel (Dual) | 2 Ω @ 500mA, 10V | 2.5V @ 1mA | 30pF @ 25V | 0.3nC @ 4.5V | 60V | 250mA | Standard | ROHS3 Compliant | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FDS6812A | ON Semiconductor | 数据表 | 7765 In Stock | - | 最小起订量: 1 最小包装量: 1 | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | 230.4mg | 2 | 24 ns | -55°C~150°C TJ | Tape & Reel (TR) | PowerTrench® | Obsolete | 1 (Unlimited) | 35MOhm | 20V | 900mW | 6.7A | Dual | 2W | 2 N-Channel (Dual) | 22m Ω @ 6.7A, 4.5V | 1.5V @ 250μA | 1082pF @ 10V | 19nC @ 4.5V | 8ns | 8 ns | 6.7A | 12V | 20V | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
![]() | MTMC8E2A0LBF | Panasonic Electronic Components | 数据表 | 2688 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 10 Weeks | 表面贴装 | 表面贴装 | 8-SMD, Flat Lead | 8 | SILICON | 2 | 4 μs | 150°C TJ | Tape & Reel (TR) | 2009 | 活跃 | 1 (Unlimited) | 8 | EAR99 | 1W | 未说明 | unknown | 未说明 | MTMC8E2A | COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR | 增强型MOSFET | 1W | 330 ns | 2 N-Channel (Dual) | SWITCHING | 21m Ω @ 2A, 4.5V | 1.3V @ 1mA | 1450pF @ 10V | 9ns | 20V | 33 ns | 7A | 12V | 7A | 0.033Ohm | 40V | METAL-OXIDE SEMICONDUCTOR | Standard | 850 mV | 830μm | 2.9mm | 2.4mm | 无SVHC | 符合RoHS标准 | |||||||||||||||||||||||||||||||||||||||||||||
NTMD2C02R2G | ON Semiconductor | 数据表 | 46300 In Stock | - | 最小起订量: 1 最小包装量: 1 | OBSOLETE (Last Updated: 1 day ago) | 表面贴装 | 表面贴装 | 8-SOIC (0.154, 3.90mm Width) | 8 | SILICON | 5.2A 3.4A | 2 | 35 ns | -55°C~150°C TJ | Tape & Reel (TR) | 2006 | e3 | yes | Obsolete | 1 (Unlimited) | 8 | EAR99 | Tin (Sn) | 逻辑电平兼容 | 20V | 2W | DUAL | 鸥翼 | 260 | 2A | 40 | 8 | 不合格 | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | 增强型MOSFET | 2W | N and P-Channel | SWITCHING | 43m Ω @ 4A, 4.5V | 1.2V @ 250μA | 1100pF @ 10V | 20nC @ 4.5V | 40ns | N-CHANNEL AND P-CHANNEL | 35 ns | 3.4A | 12V | 0.043Ohm | 20V | METAL-OXIDE SEMICONDUCTOR | 逻辑电平门 | 符合RoHS标准 | 无铅 | ||||||||||||||||||||||||||||||||||||||||||
![]() | DMC25D1UVT-7 | Diodes Incorporated | 数据表 | 128000 In Stock |
- | 最小起订量: 1 最小包装量: 1 | 14 Weeks | 表面贴装 | 表面贴装 | SOT-23-6 Thin, TSOT-23-6 | 500mA 3.9A | -55°C~150°C TJ | Tape & Reel (TR) | 2015 | e3 | 活跃 | 1 (Unlimited) | EAR99 | Matte Tin (Sn) | 1.3W | 260 | 30 | N and P-Channel | 4 Ω @ 400mA, 4.5V | 1.5V @ 250μA | 27.6pF @ 10V | 0.9nC @ 10V | 25V 12V | 3.9A | Standard | ROHS3 Compliant | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
FW216-NMM-TL-E | onsemi | 数据表 | N/A | - | 最小起订量: 1 最小包装量: 1 | Bulk | onsemi | 活跃 | * |
US6M2TR
ROHM Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
FDMS7606
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
12.797016
SI9936DY
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN1029UFDB-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
0.904158
NX138AKSX
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
STC5NF20V
STMicroelectronics
分类:Transistors - FETs, MOSFETs - Arrays
PMDPB55XP,115
Nexperia USA Inc.
分类:Transistors - FETs, MOSFETs - Arrays
4.752963
DMP2060UFDB-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
8.412168
FDS3601
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
AO4618
Alpha & Omega Semiconductor Inc.
分类:Transistors - FETs, MOSFETs - Arrays
CSD87313DMS
Texas Instruments
分类:Transistors - FETs, MOSFETs - Arrays
10.355838
IRF9389PBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
IRF6723M2DTRPBF
Infineon Technologies
分类:Transistors - FETs, MOSFETs - Arrays
NVMFD5853NT1G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
7.903303
FDMA1023PZ-F106
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
5.191846
NTLJD3115PTAG
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMC1030UFDBQ-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
8.387234
NDS9933A
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
ECH8653-TL-H
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMN63D1LDW-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
2.886544
FDS6812A
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
MTMC8E2A0LBF
Panasonic Electronic Components
分类:Transistors - FETs, MOSFETs - Arrays
4.448485
NTMD2C02R2G
ON Semiconductor
分类:Transistors - FETs, MOSFETs - Arrays
DMC25D1UVT-7
Diodes Incorporated
分类:Transistors - FETs, MOSFETs - Arrays
4.552531
FW216-NMM-TL-E
onsemi
分类:Transistors - FETs, MOSFETs - Arrays
